Samsung has recently announced the start of mass production for their new 9th generation vertical NAND (V-NAND) memory chips. These chips boast a 50% higher bit density compared to the previous 8th generation products.
Moreover, the 9th generation products come equipped with a new NAND flash interface known as “Toggle 5.1,” which allows for data transfer speeds of up to 3.2Gbps, a significant 33% increase from previous generations. Additionally, these new chips are 10% more power efficient.
A great deal of effort has been put into developing the 9th generation V-NAND. Samsung leveraged cutting-edge innovations like cell interference avoidance and cell life extension. The company also utilized its advanced channel hole etching technology to enhance productivity in the manufacturing process.
These new, faster, and higher-capacity V-NAND chips are set to be incorporated into high-performance SSDs. Samsung is also planning to expand support for PCIe 5.0 to fully leverage the increased speed.
At present, the company is mass producing 1Tb of 9th generation V-NAND chips with triple-level cells (TLC). Additionally, in the second half of this year, Samsung will begin production of a quad-level cell (QLC) variant of these chips.
Thank you for your interest in Samsung’s latest advancements in V-NAND technology!